Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling
Shu-Zhe Mei1,2 , Quan Wang1,3 , Mei-Lan Hao1,2,4 , Jian-Kai Xu1,2 , Hong-Ling Xiao1,2 , Chun Feng1,2 , Li-Juan Jiang1,2 , Xiao-Liang Wang1,2** , Feng-Qi Liu1,2 , Xian-Gang Xu3 , Zhan-Guo Wang1,2
1 Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832 University of Chinese Academy of Sciences, Beijing 1000493 State Key Laboratory of Crystal Materials, Shandong University, Jinan 2501004 School of Information & Electrical Engineering, Hebei University of Engineering, Handan 056038
Abstract ：Metal organic chemical vapor deposition (MOCVD) growth systems are one of the main types of equipment used for growing single crystal materials, such as GaN. To obtain film epitaxial materials with uniform performance, the flow field and temperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor. The computational fluid dynamics method is used to study the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding significance for the growth of GaN film materials.
收稿日期: 2018-05-31
出版日期: 2018-08-29
:
81.15.Aa
(Theory and models of film growth)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.05.Ea
(III-V semiconductors)
引用本文:
. [J]. 中国物理快报, 2018, 35(9): 98101-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/9/098101
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I9/98101
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2018, Vol. 35 
