中国物理快报  2020, Vol. 37 Issue (6): 68503-    DOI: 10.1088/0256-307X/37/6/068503
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A Novel Oxygen-Based Digital Etching Technique for p-GaN/AlGaN Structures without Etch-Stop Layers
Yang Jiang1, Ze-Yu Wan2, Guang-Nan Zhou1, Meng-Ya Fan1, Gai-Ying Yang1,5, R. Sokolovskij1, Guang-Rui Xia1,2, Qing Wang1,3,6**, Hong-Yu Yu1,4,6**
1School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
2Department of Materials Engineering, The University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
3Dongguan Institute of Opto-Electronics Peking University, Dongguan 523808, China
4Engineering Research Center of Integrated Circuits for Next-Generation Communications (Ministry of Education), Shenzhen 518055, China
5School of Innovation & Entrepreneurship, Southern University of Science and Technology, Shenzhen 518055, China
6Shenzhen Institute of the Third Generation Semiconductor, Shenzhen 518100, China