Surface Modification for WSe$_{2}$ Based Complementary Electronics
Ming-Liang Zhang , Xu-Ming Zou , and Xing-Qiang Liu*
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China
Abstract：High-performance WSe$_{2}$ complementary transistors are demonstrated on an individual flake by ozone exposure, which relies on the charge transfer mechanism. This technology is readily feasible for modulating the conductivity type in WSe$_{2}$, and the p–n junction presents a high on-off ratio of 10$^{4}$. Based on robust p-type transistors and matched output current of n-type WSe$_{2}$ transistors, the complementary inverter achieves a high voltage gain of 19.9. Therefore, this strategy may provide an avenue for development of high-performance complementary electronics.
2020, Vol. 37 
