High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al$_{2}$O$_{3}$/HfO$_{2}$ Dielectrics
Yue Li, Li Zhu, Chunsheng Chen, Ying Zhu, Changjin Wan* , and Qing Wan*
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Abstract ：High-performance amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) gated by Al$_{2}$O$_{3}$/ HfO$_{2}$ stacked dielectric films are investigated. The optimized TFTs with Al$_{2}$O$_{3}$ (2.0 nm)/HfO$_{2}$ (13 nm) stacked gate dielectrics demonstrate the best performance, including low total trap density $N_{\rm t}$, low subthreshold swing voltage, large switching ratio $I_{\rm ON/OFF}$, high mobility $\mu_{_{\scriptstyle \rm FE}}$, and low operating voltage, equal to $1.35 \times 10^{12}$ cm$^{-2}$, 88 mV/dec, $5.24 \times 10^{8}$, 14.2 cm$^{2}$/V$\cdot$s, and 2.0 V, respectively. Furthermore, a low-voltage-operated resistor-loaded inverter has been fabricated based on such an a-IGZO TFT, showing ideal full swing characteristics and high gain of $\sim $27 at 3.0 V. These results indicate a-IGZO TFTs gated by optimized Al$_{2}$O$_{3}$/HfO$_{2}$ stacked dielectrics are of great interests for low-power, high performance, and large-area display and emerging electronics.
收稿日期: 2022-09-04
出版日期: 2022-10-19
:
85.30.De
(Semiconductor-device characterization, design, and modeling)
77.55.D
(High-permittivity gate dielectric films)
81.05.Gc
(Amorphous semiconductors)
73.20.At
(Surface states, band structure, electron density of states)
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2022, Vol. 39 
