Full-Quantum Simulation of Graphene Self-Switching Diodes
Ashkan Horri1**, Rahim Faez2
1Department of Electrical Engineering, Arak Branch, Islamic Azad University Arak, Iran 2Department of Electrical Engineering Tehran, Sharif University of Technology, Iran
Abstract：We present a quantum study on the electrical behavior of the self-switching diode (SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this method, electrical characteristics of devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, the effects of geometrical variations on the electrical parameters of SSDs are simulated. The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero, reverse, and forward bias conditions. The results indicate that the turn-on voltage, rectification ratio, and differential resistance can be optimized by choosing appropriate geometrical parameters.
2019, Vol. 36 
