Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain
Junkang Li, Yiming Qu, Siyu Zeng, Ran Cheng, Rui Zhang** , Yi Zhao
College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027
Abstract ：Ge complementary tunneling field-effect transistors (TFETs) are fabricated with the NiGe metal source/drain (S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p- and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope ($S$ factor). Especially, $I_{\rm d}$ of 0.2 $\mu$A/μm is revealed at $V_{\rm g}-V_{\rm th}=V_{\rm d}=\pm 0.5$ V for Ge pTFETs, with the $S$ factor of 28 mV/dec at 7 K.
收稿日期: 2018-07-05
出版日期: 2018-10-23
:
72.80.Cw
(Elemental semiconductors)
73.40.Gk
(Tunneling)
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.30.Mn
(Junction breakdown and tunneling devices (including resonance tunneling devices))
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2018, Vol. 35 
