Metastable Electron Traps in Modified Silicon-on-Insulator Wafer
Li-Hua Dai1,2** , Da-Wei Bi1 , Zheng-Xuan Zhang1 , Xin Xie1,2 , Zhi-Yuan Hu1 , Hui-Xiang Huang3 , Shi-Chang Zou1
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502 University of Chinese Academy of Sciences, Beijing 1000493 Information Engineering College, Jimei University, Fujian 361021
Abstract ：We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator (SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.
收稿日期: 2018-01-23
出版日期: 2018-04-30
:
61.80.Ed
(γ-ray effects)
61.82.Fk
(Semiconductors)
85.30.De
(Semiconductor-device characterization, design, and modeling)
引用本文:
. [J]. 中国物理快报, 2018, 35(5): 56101-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/5/056101
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I5/56101
[1] Schwank J R, Ferlet-Cavrois V, Shaneyfelt M R et al 2003 IEEE Trans. Nucl. Sci. 50 522 [2] Celler G K and Cristoloveanu S 2003 J. Appl. Phys. 93 4955 [3] Musseau O and Ferlet-Cavrois V 2001 IEEE Nucl. Space Radiat. Eff. Conf. (Vancouver Canada, 16 July 2001) p III-22 [4] Stahlbush R E, Campisi G J, McKitterick J B et al 1992 IEEE Trans. Nucl. Sci. 39 2086 [5] Warren W L, Shaneyfelt M R, Schwank J R et al 1993 IEEE Trans. Nucl. Sci. 40 1755 [6] Mrstik B J, Hughes H L, Gouker P et al 2003 IEEE Trans. Nucl. Sci. 50 1947 [7] Bi D W, Zhang Z X, Chen M et al 2012 Nucl. Instrum. Methods Phys. Res. Sect. B 272 257 [8] Mrstik B J, Hughes H L, McMarr P J et al 2001 Microelectron. Eng. 59 285 [9] Huang H X, Bi D W, Chen M et al 2014 IEEE Trans. Nucl. Sci. 61 1400 [10] Zhang E X, Yu Z S, Cao Y G et al 2008 J. Vac. Sci. Technol. A 26 L1 [11] Schwank J R, Fleetwood D M, Xiong H D et al 2004 Microelectron. Eng. 72 362 [12] Liu Y, Chen H B, Liu Y R et al 2015 Chin. Phys. B 24 088503 [13] Dai L H, Bi D W, Hu Z Y et al 2018 Chin. Phys. B 27 048503 [14] Liu S T, Balster S, Sinha S et al 1999 IEEE Trans. Nucl. Sci. 46 1817 [15] Oldman T R 2011 IEEE Nucl. Space Radiat. Eff. Conf. (Las Vegas Nevada, 25 July 2001) p III-2 [16] He Z R, Chen J H, Keum J et al 2014 Org. Electron. 15 150 [17] He Z R, Xiao K, William D et al 2011 Adv. Funct. Mater. 21 3617 [18] Xiong H D, Jun B, Fleetwood D M et al 2004 IEEE Trans. Nucl. Sci. 51 3238
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
SUN Dun-Lu;ZHANG Qing-Li;XIAO Jing-Zhong;LUO Jian-Qiao;JIANG Hai-He;YIN Shao-Tang. Influence of Gamma-Ray Irradiation on Absorption and Fluorescent Spectra of Nd:YAG and Yb:YAG Laser Crystals
[10]
REN Guo-Hao;WANG Shao-Hua;SHEN Ding-Zhong;YIN Zhi-Wen. Active Loss of Light Yield of PbWO4 :Y Scintillation Crystals After Irradiation
[11]
SHAO Ming;CHEN Hong-Fang;LI Cheng;XU Tong;SHI Chao-Shu;WU Jian;CHEN Hui;XU Zi-Zong;WANG Zhao-Min;WANG Xiao-Lian;DENG Qun;YIN Zhi-Wen. Scintillation Characteristics of Doped PbWO4 Crystals
[12]
HE Jing-tang;LÜYu-sheng;CHEN Duan-bao;LI Zu-hao;BIAN Jian-guo;ZHU Guo-yi;TANG Xiao-wei;CHEN Gang;ZHENG Lian-rong;CHEN Xiao-hong;REN Shao-xia. Loss of Light Yield of Doped Lead Tungstate Crystals After Irradiation
[13]
ZHANG Guilin;LIU Wenhong;ZHANG Hui;CHANG Ruqin;JIN Huijuan;XU Guiqin;YANG Yi. Influence of γ-irradiation on Properties of Amorphous Fe78 B13 Si9 Alloy Studied by Mössbauer Spectroscopy and Bending Test
[14]
.
2018, Vol. 35 
