Electric-Field Switching of Exciton Spin Splitting in Asymmetrical Coupled Quantum Dots
LI Xiao-Jing**
College of Physics and Energy, Fujian Normal University, Fuzhou 350007
Abstract :The spin splitting of the exciton states in semiconductor asymmetrical coupled quantum dots (CQDs) containing a single magnetic ion is theoretically investigated. It is found that the spin splitting is not the largest when the electric field is zero. An electric field stronger than that in symmetrical CQDs is necessary to switch the splitting on/off. The mixing between the bonding and antibonding hole states consequently results in the bright-to-dark transition of the ground exciton in the photoluminescence spectrum.
收稿日期: 2012-04-06
出版日期: 2012-07-31
:
68.65.Hb
(Quantum dots (patterned in quantum wells))
61.72.uj
(III-V and II-VI semiconductors)
81.40.Rs
(Electrical and magnetic properties related to treatment conditions)
[1] R Hanson, L P Kouwenhoven, J R Petta, S Tarucha and L M K Vandersypen 2007 Rev. Mod. Phys. 79 1217 [2] S Fafard, K Hinzer, S Raymond, M Dion, J McCaffrey, Y Feng, S Charbonneau 1996 Science 274 1350 [3] A Marti, E Antolin, C R Stanley, C D Farmer, N Lopez, P Diaz, E Canovas, P G Linares and A Luque 2006 Phys. Rev. Lett. 97 247701 [4] S A Wolf, D D Awschalom, R A Buhrman, J M Daughton, S von Molnar, M L Roukes, A Y Chtchelkanova and D M Treger 2001 Science 294 1488 [5] C S Kim, M Kim, S Lee, J Kossut, J K Furdyna and M Dobrowlska 2000 J. Cryst. Growth 214 395 [6] J Kossut, I Yamakawa., A Nakamura and S Takeyama 2001 Appl. Phys. Lett. 79 1789 [7] Kai Chang, J B Xia, F M Peeters 2003 Appl. Phys. Lett. 82 2661 Kai Chang, S S Li, J B Xia and F M Peeters 2004 Phys. Rev. B 69 235203 [8] Y Léger, L Besombes, J Fernández-Rossier, L Maingault and H Mariette 2006 Phys. Rev. Lett. 97 107401 L Besombes, Y Leger, L Maingault and H Mariette 2007 J. Appl. Phys. 101 081713 [9] Xiaojing Li and Kai Chang 2008 Appl. Phys. Lett. 92 251114 [10] A A Maksimov, G Bacher, A MacDonald, V D Kulakovskii, A Forchel, C R Becker, G Landwehr and L Molenkamp 2000 Phys. Rev. B 62 R7767 [11] S H Xin, P D Wang, A Yin, C Kim, M Dobrowolska, J L Merz and J K Furdyna 1996 Appl. Phys. Lett. 69 3884 [12] X J Li and Kai Chang 2008 Appl. Phys. Lett. 92 071116 [13] G Ortner, M Bayer, Y Lyanda-Geller, T L Reinecke, A Kress, J P Reithmaier and A Forchel 2005 Phys. Rev. Lett. 94 157401 [14] B Szafran and F M Peeters 2007 Phys. Rev. B 76 195442 [15] H J Krenner, M Sabathil, E C Clark, A Kress, D Schuh, M Bichler, G Abstreiter and J J Finley 2005 Phys. Rev. Lett. 94 057402 [16] M Scheibner, M F Doty, I V Ponomarev, A S Bracker, E A Stinaff, V L Korenev, T L Reinecke and D Gammon 2007 Phys. Rev. B 75 245318
[1]
. [J]. 中国物理快报, 2018, 35(5): 56801-.
[2]
. [J]. 中国物理快报, 2017, 34(4): 47801-047801.
[3]
. [J]. 中国物理快报, 2013, 30(8): 87804-087804.
[4]
. [J]. Chin. Phys. Lett., 2013, 30(2): 20303-020303.
[5]
. [J]. Chin. Phys. Lett., 2013, 30(1): 16801-016801.
[6]
SIB KRISHNA Ghoshal**;M. R. Sahar;M. S. Rohani
. Dielectric Function of Silicon Nanoclusters: Role of Hydrogen [J]. 中国物理快报, 2011, 28(9): 97801-097801.
[7]
TIAN Peng;HUANG Li-Rong**;YUAN Xiu-Hua;HUANG De-Xiu
. Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules [J]. 中国物理快报, 2011, 28(6): 67304-067304.
[8]
LI Zhan-Guo;LIU Guo-Jun**;LI Lin;FENG Ming;LI Mei;LU Peng;ZOU Yong-Gang;LI Lian-He;GAO Xin. Strain-Engineered Low-Density InAs Bilayer Quantum Dots for Single Photon Emission [J]. 中国物理快报, 2010, 27(12): 126801-126801.
[9]
ZHANG Xian-Gao;CHEN Kun-Ji;FANG Zhong-Hui;QIAN Xin-Ye;LIU Guang-Yuan;JIANG Xiao-Fan;MA Zhong-Yuan;XU Jun;HUANG Xin-Fan;JI Jian-Xin;HE Fei;SONG Kuang-Bao;ZHANG Jun;WAN Hui;WANG Rong-Hua. Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment [J]. 中国物理快报, 2010, 27(8): 87301-087301.
[10]
DONG Ping;ZHANG Gang;CAO Zhuo-Liang. Entanglement Purification for Mixed Entangled Quantum Dot States via Superconducing Transmission Line Resonators [J]. 中国物理快报, 2010, 27(3): 30301-030301.
[11]
WANG Peng-Fei;XIONG Yong-Hua;WANG Hai-Li;HUANG She-Song;NI Hai-Qiao;XU Ying-Qiang;HE Zhen-Hong;NIU Zhi-Chuan. GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy [J]. 中国物理快报, 2009, 26(6): 67801-067801.
[12]
HAN Gen-Quan;ZENG Yu-Gang;YU Jin-Zhong;CHENG Bu-Wen;YANG Hai-Tao. Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing [J]. 中国物理快报, 2008, 25(1): 242-245.
[13]
WU Bing-Peng;WU Dong-Hai;NI Hai-Qiao;HUANG She-Song;ZHAN Feng;XIONG Yong-Hua;XU Ying-Qiang;NIU Zhi-Chuan. Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy [J]. 中国物理快报, 2007, 24(12): 3543-3546.
[14]
LIANG Song;ZHU Hong-Liang;PAN Jiao-Qing;ZHAO Ling-Juan;WANG Wei. Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates [J]. 中国物理快报, 2005, 22(10): 2692-2695.
[15]
DENG Ning;ZHANG Lei;CHEN Pei-Yi. Investigation of Composition in Nano-Scaled Self-Assembled SiGe Islands [J]. 中国物理快报, 2005, 22(7): 1761-1763.