Polarization Stable Vertical Cavity Surface Emitting Laser Array Based on Proton Implantation
XUN Meng1, XU Chen1**, XIE Yi-Yang1,2, DENG Jun1, XU Kun1, JIANG Guo-Qing1, PAN Guan-Zhong1, CHEN Hong-Da2
1Key Laboratory of Optoelectronics Technology (Ministry of Education), Beijing University of Technology, Beijing 100124 2State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract:Polarization stable characteristic of vertical cavity surface emitting laser array with rectangular element structure based on proton implantation is achieved. Arrays with different aperture sizes and different array scales are investigated. The maximum orthogonal polarization suppression ratio of a 6×6 array with 6 μm × 4 μm elements is as high as 16.1 dB at 51 mA. The x-polarization dominates y-polarization in the operation current range from the threshold to the saturated current. The full widths at half maximum in far-field profiles for x-polarization and y-polarization are 8.8° and 10.7°, respectively. These results suggest that stable polarization is available in the implant-defined VCSEL array.