A Win-Win Effect for Both the Ferromagnetism and the Dopability of p-Type Doping in ZnO:(Cu+N)
WEI Ling, ZHANG Wei-Feng**
Key laboratory of Photovoltaic Techniques, School of Physics & Electronics, Henan University, Kaifeng 475001
Abstract ：We investigate the electronic structures and magnetic properties of ZnO doped with N, Cu, and (Cu+N) by using a first principles method and considering the strong correlation effect. It is interesting to compare these three systems. ZnO:N has weak p-type doping and unstable ferromagnetism, while ZnO:Cu becomes insulating due to the Jahn–Teller effect. Cu and N codoping can not only greatly improve the dopability of p-type doping accompanying the Jahn–Teller fading, but also enhance the ferromagnetism at the same time. The calculation results indicate that there is a win-win effect between N and Cu dopants in the ZnO:(Cu+N) system, which could possibly find applications in spintronics besides optoelectronics.
收稿日期: 2013-02-26
出版日期: 2013-11-21
[1] Chung K, C H Lee and Yi G C 2010 Science 330 655 2007 Appl. Phys. Lett. 90 052505 2006 Nanotechnology 17 4312 2006 Appl. Phys. Lett. 89 102104 2010 Appl. Phys. Lett. 97 013501 2008 Nano Lett. 8 2591 2009 Appl. Phys. Lett. 95 252105 2008 Appl. Phys. Lett. 92 052106 2008 Phys. Rev. B 77 035209 2012 Chin. Phys. Lett. 29 106103 2009 Phys. Rev. B 80 125313 2008 Phys. Rev. Lett. 100 047206 2012 Chin. Phys. Lett. 29 127804 2004 Appl. Phys. Lett. 84 1338 2008 Phys. Rev. B 77 201303 2006 Appl. Phys. Lett. 89 062505 2010 Phys. Rev. Lett. 104 137201 1991 Phys. Rev. B 44 13298 1996 Phys. Rev. Lett. 77 3865 2006 Phys. Rev. B 73 075202 2006 Phys. Rev. B 73 245212 2007 Phys. Rev. Lett. 99 127201 2003 Phys. Rev. B 68 224436 2001 Phys. Rev. B 63 104411 2006 Phys. Rev. B 73 165424 2009 J. Phys.: Condens. Matter 21 185503 2011 Phys. Rev. B 83 085202
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
CAO Xiao-Long;WANG Yu-Ye;XU De-Gang;**;ZHONG Kai;LI Jing-Hui;LI Zhong-Yang;ZHU Neng-Nian;YAO Jian-Quan;. THz-Wave Difference Frequency Generation by Phase-Matching in GaAs/Alx 1−x As Asymmetric Quantum Well
[15]
LIU Sheng-Hou;CAI Yong**;GONG Ru-Min;WANG Jin-Yan;ZENG Chun-Hong;SHI Wen-Hua;FENG Zhi-Hong;WANG Jing-Jing;YIN Jia-Yun;Cheng P. Wen;QIN Hua;ZHANG Bao-Shun
. Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure
2013, Vol. 30 
