High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model
FANG Yu-Long1,2, FENG Zhi-Hong2**, LI Cheng-Ming1, SONG Xu-Bo2, YIN Jia-Yun2, ZHOU Xing-Ye2, WANG Yuan-Gang2, LV Yuan-Jie2, CAI Shu-Jun2
1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 2National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051
Abstract：We report on the temperature-dependent dc performance of AlGaN/GaN polarization doped field effect transistors (PolFETs). The rough decrements of drain current and transconductance with the operation temperature are observed. Compared with the conventional HFETs, the drain current drop of the PolFET is smaller. The transconductance drop of PolFETs at different gate biases shows different temperature dependences. From the aspect of the unique carrier behaviors of graded AlGaN/GaN heterostructure, we propose a quasi-multi-channel model to investigate the physics behind the temperature-dependent performance of AlGaN/GaN PolFETs.
(Semiconductor-device characterization, design, and modeling)
引用本文:
. [J]. 中国物理快报, 2015, 32(03): 37202-037202.
FANG Yu-Long, FENG Zhi-Hong, LI Cheng-Ming, SONG Xu-Bo, YIN Jia-Yun, ZHOU Xing-Ye, WANG Yuan-Gang, LV Yuan-Jie, CAI Shu-Jun. High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model. Chin. Phys. Lett., 2015, 32(03): 37202-037202.
2015, Vol. 32 
