High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD
KONG Xiang-Ting1, ZHOU Xu-Liang1, LI Shi-Yan1, QIAO Li-Jun1, LIU Hong-Gang2, WANG Wei1, PAN Jiao-Qing1**
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
Abstract：We demonstrate high-performance In0.23Ga0.77As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with Ion/Ioffhigh on-current to off-current (Ion/Ioff) ratio grown on semi-insulating GaAs wafers by metal-organic chemical vapor deposition (MOCVD). The 2 μm channel-length devices exhibit a peak extrinsic transconductance of 150 mS/mm and a drain current up to 500 mA/mm. The maximum effective mobility is 1680 cm2/Vs extracted by the split C–V method. Furthermore, the Ion/Ioff ratio is significantly improved from approximately 4.5×103 up to approximately 4.32×104 by controlling the etch thickness of In0.49Ga0.51P. The high drain current and high Ion/Ioff ratio of the In0.23Ga0.77As channel MOSFETs are achieved due to the high effective mobility and the low gate leakage current density.
. [J]. 中国物理快报, 2015, 32(03): 37301-037301.
KONG Xiang-Ting, ZHOU Xu-Liang, LI Shi-Yan, QIAO Li-Jun, LIU Hong-Gang, WANG Wei, PAN Jiao-Qing. High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio Ion/Ioff Grown on Semi-insulating GaAs Substrates by MOCVD. Chin. Phys. Lett., 2015, 32(03): 37301-037301.
2015, Vol. 32 
