Unipolar Resistive Switching Effects Based on Al/ZnO/P++-Si Diodes for Nonvolatile Memory Applications
SHI Wei1,2, TAI Qiang1, XIA Xian-Hai1, YI Ming-Dong1,2**, XIE Ling-Hai1, FAN Qu-Li1, WANG Lian-Hui1, WEI Ang1, HUANG Wei1,2**
1Key Laboratory for Organic Electronics & Information Displays and Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, Nanjing 210046 2Jiangsu-Singapore Joint Research Center for Organic/Bio Electronics & Information Displays, Nanjing 210046
Abstract：Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 104–105 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.
. [J]. 中国物理快报, 2012, 29(8): 87201-087201.
SHI Wei, TAI Qiang, XIA Xian-Hai, YI Ming-Dong, XIE Ling-Hai, FAN Qu-Li, WANG Lian-Hui, WEI Ang, and HUANG Wei. Unipolar Resistive Switching Effects Based on Al/ZnO/P++-Si Diodes for Nonvolatile Memory Applications. Chin. Phys. Lett., 2012, 29(8): 87201-087201.
2012, Vol. 29 
