A Novel Controllable Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage
WANG Zhi-Gang** , CHEN Wan-Jun, ZHANG Bo, LI Zhao-Ji
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
Abstract ：A novel controllable hybrid-anode AlGaN/GaN field-effect rectifier (HA-FER) with low operation voltage (LOV) is proposed. Its mechanism can be explained by the field-controlled energy band model. This model reveals that the electric field in the AlGaN layer alters the energy band to result in a variation of the two-dimensional electron gas (2DEG) at AlGaN/GaN interface; the field can be changed by the thickness d of the AlGaN layer and the applied bias. As the d reduces below the critical thickness, the 2DEG vanishes and then the channel is pinched off. Therefore, the threshold voltage of HA-FER can be designed as low as 0 V leading to LOV (< 1 V). The analytical characteristic of the HA-FER is calculated and validated by the simulated results. These results also demonstrate that the forward properties of HA-FER are superior to the conventional SBD due to the high Schottky barrier.
收稿日期: 2012-05-30
出版日期: 2012-10-01
[1] Cai Y, Y Zhou G, Chen K J and Lau K M 2005 IEEE Electron Device Lett. 26 435 2003 IEEE Trans. Electron Devices 50 2528 2008 Chin. Phys. B 17 290 2009 Chin. Phys. B 18 1601 2006 Chin. Phys. B 15 0636 2011 Chin. Phys. B 20 027304 2003 Appl. Phys. Lett. 82 4364 2008 Appl. Phys. Lett. 92 253501-1 2008 IEEE Electron Device Lett. 29 543 2010 IEEE Trans. Electron Devices 57 368 Proc. ISPSD 2010 3471999 J. Appl. Phys. 85 3222 1983 IEEE Trans. Electron Devices 30 207 2004 J. Appl. Phys. 96 3286 2012 Chin. Phys. Lett. 29 087204 2012 Chin. Phys. Lett. 29 087203 2012 Chin. Phys. Lett. 29 078502 2012 Chin. Phys. Lett. 29 028501 2009 IEEE Electron Device Lett. 30 901903 2010 IEEE Electron Device Lett. 31 5
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
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2012, Vol. 29 
