AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient
HA Wei, ZHANG Jin-Cheng** , ZHAO Sheng-Lei, GE Sha-Sha, WEN Hui-Juan, ZHANG Chun-Fu, MA Xiao-Hua, HAO Yue
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
Abstract ：The conventional AlGaN/GaN high electron mobility transistor (HEMT), the AlGaN/GaN/AlGaN HEMT, and the Alx 1?x N/Aly 1?y N HEMT are fabricated on sapphire substrates to study the drain-induced barrier-lowering (DIBL) effect. It is found that the Alx 1?x N/Aly 1?y N HEMT with AlGaN channel has the lowest DIBL coefficient of 6.7 mV/V compared with the other two HEMTs. This is attributed to the best two-dimensional electron gas confinement of the Alx 1?x N/Aly 1?y N structure. This opinion is further confirmed by the conduction band diagrams and electron distribution calculated from the one-dimensional Poisson–Schr?dinger equation.
收稿日期: 2013-05-22
出版日期: 2013-12-13
:
72.80.Ey
(III-V and II-VI semiconductors)
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.30.Tv
(Field effect devices)
引用本文:
. [J]. 中国物理快报, 2013, 30(12): 127201-127201.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/12/127201
或
https://cpl.iphy.ac.cn/CN/Y2013/V30/I12/127201
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2013, Vol. 30 
