AlGaN Channel High Electron Mobility Transistors with an AlxGa1?xN/GaN Composite Buffer Layer
LI Xiang-Dong1, ZHANG Jin-Cheng1**, ZOU Yu1, MA Xue-Zhi2, LIU Chang2, ZHANG Wei-Hang1, WEN Hui-Juan1, HAO Yue1
1Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 2School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Abstract：We report an AlGaN channel high electron mobility transistor (HEMT) on a sapphire substrate with a 1000-nm AlxGa1?xN (x=0–0.18)/GaN composite buffer layer. With a significant improvement of crystal quality, the device features a high product of ns?μn. The AlGaN channel HEMTs presented show improved performance with respect to the conventional AlGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω?mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/mm, and reverse gate leakage current reduced from 1.85×10?3 to 2.15×10?5 mA/mm at VGD=?20 V.
. [J]. 中国物理快报, 2015, 32(07): 77205-077205.
LI Xiang-Dong, ZHANG Jin-Cheng, ZOU Yu, MA Xue-Zhi, LIU Chang, ZHANG Wei-Hang, WEN Hui-Juan, HAO Yue. AlGaN Channel High Electron Mobility Transistors with an AlxGa1?xN/GaN Composite Buffer Layer. Chin. Phys. Lett., 2015, 32(07): 77205-077205.
2015, Vol. 32 
