Al0.30 Ga0.70 N/GaN/Al0.07 Ga0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm
LI Xiang-Dong, ZHANG Jin-Cheng** , GUO Zhen-Xing, JIANG Hai-Qing, ZOU Yu, ZHANG Wei-Hang, HE Yun-Long, JIANG Ren-Yuan, ZHAO Sheng-Lei, HAO Yue
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
Abstract ：We report Al0.30 Ga0.70 N/GaN/Al0.07 Ga0.93 N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm2 /V?s, sheet carrier density improved from 0.87×1013 to 1.15×1013 cm?2 , edge dislocation density reduced from 2.4×109 to 1.3×109 cm?2 , saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V.
收稿日期: 2015-07-07
出版日期: 2015-12-01
:
72.80.Ey
(III-V and II-VI semiconductors)
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.30.Tv
(Field effect devices)
引用本文:
. [J]. 中国物理快报, 2015, 32(11): 117202-117202.
0.30 Ga0.70 N/GaN/Al0.07 Ga0.93 N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050 mA/mm. Chin. Phys. Lett., 2015, 32(11): 117202-117202.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/32/11/117202
或
https://cpl.iphy.ac.cn/CN/Y2015/V32/I11/117202
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2015, Vol. 32 
