Growth of a-Plane InN Film and Its THz Emission
WANG Guang-Bing1 , ZHAO Guo-Zhong3 , ZHENG Xian-Tong1 , WANG Ping1 , CHEN Guang1 , RONG Xin1 , WANG Xin-Qiang1,2**
1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 1008712 Collaborative Innovation Center of Quantum Matter, Beijing 1008713 Department of Physics, Capital Normal University, Beijing 100048
Abstract ：We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a GaN buffer layer, which has been confirmed by reflection high-energy electron diffraction, x-ray diffraction and Raman scattering measurements. The Hall effect measurement shows that the electron mobility of the as-grown a-plane InN is about 406 cm2 /V?s with a residual electron concentration of 5.7×1018 cm?3 . THz emission from the a-plane InN film is also studied, where it is found that the emission amplitude is inversely proportional to the conductivity.
出版日期: 2014-06-30
引用本文:
. [J]. 中国物理快报, 2014, 31(07): 77202-077202.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/7/077202
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I07/77202
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2014, Vol. 31 
