中国物理快报  2012, Vol. 29 Issue (9): 96101-096101    DOI: 10.1088/0256-307X/29/9/096101
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Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers
SUN He-Hui1**, GUO Feng-Yun1, LI Deng-Yue1, WANG Lu2, ZHAO De-Gang3, ZHAO Lian-Cheng1
1Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin 150001
2Renewable Energy Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
3State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083