Abstract：The effect of Be doping on the quantum efficiency and the dark current of InAs/GaSb long-wavelength infrared superlattice photodetectors grown by molecular-beam epitaxy on GaSb substrates are reported. A significant improvement of quantum efficiency (QE) with p-type doping is demonstrated. Our results show that Be doping level at 2.5×1015 cm3 gives the highest quantum efficiency of product 28%. We also demonstrate that the increased QE is not only resulted from the longer minority carrier diffusion length, but also the p-n junction location change. Finally, the result also shows that the sample with a doping density of 2.5×1015 cm3 has the largest D* as 8.68×1010 cm?Hz1/2?W?1, which is almost five times D* of the non-intentionally doped one.
. [J]. 中国物理快报, 2014, 31(10): 108503-108503.
ZHOU Yi, CHEN Jian-Xin, XU Zhi-Cheng, WANG Fang-Fang, XU Qing-Qing, XU Jia-Jia, BAI Zhi-Zhong, JIN Chuan, HE Li. High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region. Chin. Phys. Lett., 2014, 31(10): 108503-108503.
2014, Vol. 31 
