1Key Laboratory of Polar Materials and Devices (Ministry of Education), Institute of Functional Materials, Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241 2Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433 3State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
Abstract：We design and fabricate a good performance silicon photoconductive terahertz detector on sapphire substrates at room temperature. The best voltage responsivity of the detector is 6679 V/W at frequency 300 GHz as well as low voltage noise of 3.8 nV/Hz$^{1/2}$ for noise equivalent power 0.57 pW/Hz$^{1/2}$. The measured response time of the device is about 9 μs, demonstrating that the detector has a speed of $>$110 kHz. The achieved good performance, together with large detector size (acceptance area is 3 μm$\times 160$ μm), simple structure, easy manufacturing method, compatibility with mature silicon technology, and suitability for large-scale fabrication of imaging arrays provide a promising approach to the development of sensitive terahertz room-temperature detectors.
2019, Vol. 36 
