State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054
Abstract：The optical property and injection efficiency of N-face AlGaN based ultraviolet light emitting diodes (UV-LEDs) are studied and compared with Ga-face AlGaN based UV-LEDs. A staircase electron injector is introduced in the N-face AlGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.
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2014, Vol. 31 
