Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes
Ning Zhang1**, Xue-Cheng Wei1, Kun-Yi Lu2, Liang-Sen Feng1, Jie Yang1, Bin Xue1, Zhe Liu1, Jin-Min Li1, Jun-Xi Wang1**
1Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083 2Electronic Information School, Wuhan University, Wuhan 430072
Abstract：The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes (LEDs) is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law $L\propto I^{m}$, with smaller parameter $m$ in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mg-defect-related nonradiative centers in the active region. Furthermore, the forward current–voltage characteristics are improved.
. [J]. 中国物理快报, 2016, 33(11): 117302-117302.
Ning Zhang, Xue-Cheng Wei, Kun-Yi Lu, Liang-Sen Feng, Jie Yang, Bin Xue, Zhe Liu, Jin-Min Li, Jun-Xi Wang. Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes. Chin. Phys. Lett., 2016, 33(11): 117302-117302.
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2016, Vol. 33 
