High-Pressure Water-Vapor Annealing for Enhancement of a-Si:H Film Passivation of Silicon Surface
GUO Chun-Lin, WANG Lei** , ZHANG Yan-Rong, ZHOU Hai-Feng, LIANG Feng, YANG Zhen-Hui, YANG De-Ren
State Key Laboratory of Silicon Materials, and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027
Abstract ：We investigate the effect of amorphous hydrogenated silicon (a-Si:H) films passivated on silicon surfaces based on high-pressure water-vapor annealing (HWA). The effective carrier lifetime of samples reaches the maximum value after 210°C, 90 min HWA. Capacitance-voltage measurement reveals that the HWA not only greatly reduces the density of interface states (Dit ), but also decreases the fixed charges (Qfixed ) mainly caused by bulk defects. The change of hydrogen and oxygen in the film is measured by a spectroscopic ellipsometer and a Fourier-transform infrared (FTIR) spectrometer. All these results show that HWA is a useful method to improve the passivation effect of a-Si:H films deposited on silicon surfaces.
出版日期: 2014-10-31
引用本文:
. [J]. 中国物理快报, 2014, 31(10): 108501-108501.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/10/108501
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I10/108501
[1] Willeke G P 2002 Sol. Energy Mater. Sol. Cells 72 191 2002 Semicond. Sci. Technol. 17 35 Proceedings of the 26th IEEE PVSC (Anaheim, CA, USA) p 11332001 Sol. Energy Mater. Sol. Cells 65 239 2005 Appl. Phys. Lett. 86 032112 2008 Appl. Phys. Lett. 92 033504 2011 Sol. Energy Mater. Sol. Cells 95 203 1987 Solid-State Electron. 30 1143 1987 J. Appl. Phys. 61 2575 1992 Jpn. J. Appl. Phys. 31 3518 2007 Appl. Phys. Lett. 90 042111 2010 Physica B 405 61 Appl. Phys. 10 375Sci. Chin. Technol. Sci.. 56 103Jpn. J. Appl. Phys. 37 14522007 Jpn. J. Appl. Phys. 46 1286 The 21st International Photovoltaic Science and Engineering Conference (November 28–December 2 2011 Fukuoka Japan)2007 Appl. Phys. Lett. 90 013503 1994 Solid-State Electron. 37 433 2011 Appl. Phys. Lett. 99 052103 Hydrogenated Amorphous Silicon (Cambridge: Cambridge University)2008 J. Vac. Sci. Technol. A 26 683
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
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[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
.
[15]
.
2014, Vol. 31 
