Wavelength Extended InGaAsBi Detectors with Temperature-Insensitive Cutoff Wavelength
Ben Du1,2, Yi Gu1, Yong-Gang Zhang1**, Xing-You Chen1, Ying-Jie Ma1, Yan-Hui Shi1,2, Jian Zhang1,2
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2University of Chinese Academy of Sciences, Beijing 100049
Abstract：We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63 μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%, respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working.
2018, Vol. 35 
