Characterization of HfSiAlON/MoAlN PMOSFETs Fabricated by Using a Novel Gate-Last Process
XU Gao-Bo** , XU Qiu-Xia, YIN Hua-Xiang, ZHOU Hua-Jie, YANG Tao, NIU Jie-Bin, HE Xiao-Bin, MENG Ling-Kuan, YU Jia-Han, LI Jun-Feng, YAN Jiang, ZHAO Chao, CHEN Da-Peng
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
Abstract ：We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors (PMOSFETs) with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process. In the process, SiO2 /poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation. Because of the high-k /metal-gate stack formation after the 1000°C source/drain ion-implant doping activation, the fabricated PMOSFET has good electrical characteristics. The device's saturation driving current is 2.71× 10?4 A/μm (V GS =V DS =?1.5 V) and the off-state current is 2.78× 10?9 A/μm. The subthreshold slope of 105 mV/dec (V DS =?1.5 V), drain induced barrier lowering of 80 mV/V and V th of ?0.3 V are obtained. The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.
收稿日期: 2013-05-20
出版日期: 2013-11-21
:
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
73.61.-r
(Electrical properties of specific thin films)
73.90.+f
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
引用本文:
. [J]. 中国物理快报, 2013, 30(8): 87303-087303.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/30/8/087303
或
https://cpl.iphy.ac.cn/CN/Y2013/V30/I8/87303
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2013, Vol. 30 
