Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content
Bin-Xu, Jing-Ping Xu, Lu Liu** , Yong Su
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
Abstract ：The interfacial and electrical properties of high-$k$ LaTaON gate dielectric Ge metal-oxide-semiconductor (MOS) capacitors with different tantalum (Ta) contents are investigated. Experimental results show that the Ge MOS capacitors with a Ta content of $\sim$30% exhibit the best interfacial and electrical properties, including low interface-state density $(7.6\times10^{11}$ cm$^{-2}$ eV$^{-1}$), small gate-leakage current $(8.32\times10^{-5}$ A/cm$^{2}$) and large equivalent permittivity (22.46). The x-ray photoelectron spectroscopy results confirm that the least GeO$_{x}$ is formed at the Ge surface for the sample with a Ta content of $\sim$30% due to the effective blocking role of Ta against O diffusion and the greatly improved hygroscopicity of LaON.
收稿日期: 2018-01-29
出版日期: 2018-06-24
:
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
73.20.At
(Surface states, band structure, electron density of states)
71.20.Eh
(Rare earth metals and alloys)
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2018, Vol. 35 
