Improvement of Performance of HfS$_{2}$ Transistors Using a Self-Assembled Monolayer as Gate Dielectric
Wen-Lun Zhang**
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
Abstract ：This work details a study based on HfS$_{2}$ transistors utilizing an n-octadecylphosphonic acid-based self-assembled monolayer (SAM) as the gate dielectric. The fabrication of the SAM-based two-dimensional (2D) material transistor is simple and can be used to improve the quality of the interface of air-sensitive 2D materials. In comparison to HfS$_{2}$ transistors utilizing a conventional Al$_{2}$O$_{3}$ gate insulator by atomic layer deposition, HfS$_{2}$ transistors utilizing an SAM as the gate dielectric can reduce the operation region from 4 V to 2 V, enhance the field-effect mobility from 0.03 cm$^{2}$/Vs to 0.75 cm$^{2}$/Vs, improve the sub-threshold swing from 404 mV/dec to 156 mV/dec, and optimize the hysteresis to 0.03 V, thus demonstrating improved quality of the semiconductor/insulator interface.
收稿日期: 2019-03-21
出版日期: 2019-05-18
:
73.63.Bd
(Nanocrystalline materials)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
68.35.Ct
(Interface structure and roughness)
[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666 [2] Dennard R H, Gasensslen F H, Yu H, Rideout V L, Bassous E and Leblanc A R 1974 IEEE Trans. Solid-State Circuits SC-9 256 [3] Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nat. Nanotechnol. 6 147 [4] Fang H, Chuang S, Chang T C, Takei K, Takahashi T and Javey A 2012 Nano Lett. 12 3788 [5] Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H and Zhang Y 2014 Nat. Nanotechnol. 9 372 [6] Zhang W, Huang Z, Zhang W and Li Y 2014 Nano Res. 7 1731 [7] Yang J, Kim S, Choi W, Park S H, Jung Y, Cho M and Kim H 2013 ACS Appl. Mater. Interfaces 5 4739 [8] Xu K, Huang Y, Chen B, Xia Y, Lei W, Wang Z, Wang Q, Wang F, Yin L and He J 2016 Small 12 3106 [9] Lee C, Rathi S, Khan M A, Lim D, Kim Y, Yun S J, Youn D, Watanabe K, Taniguchi T and Kim G 2018 Nanotechnology 29 335202 [10] Castellanos-Gomez A, Buscema M, Molenaar R, Singh V, Janssen L, van der Zant H S J and Steele G A 2014 2D Mater. 1 011002 [11] Chae S H, Jin Y, Kim T S, Chung D S, Na H, Nam H, Kim H, Perello D J, Jeong H Y, Ly T H and Lee Y H 2016 ACS Nano 10 1309 [12] Klauk H, Zschieschang U, Pflaum J and Halik M 2007 Nature 445 745 [13] Kawanago T and Oda S 2016 Appl. Phys. Lett. 108 041605 [14] Salinas M 2014 Interface Engineering with Self-Assembled Monolayers for Organic Electronics (Erlangen: FAU University Press) [15] Xu L, Gao N, Zhang Z and Peng L 2018 Appl. Phys. Lett. 113 083105 [16] Xu K, Wang Z, Wang F, Huang Y, Wang F, Yin L, Jiang C and He J 2015 Adv. Mater. 27 7881
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
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2019, Vol. 36 
