White Emitting ZnS Nanocrystals: Synthesis and Spectrum Characterization
HUANG Qing-Song, DONG Dong-Qing, XU Jian-Ping, ZHANG Xiao-Song, ZHANG Hong-Min, LI Lan
Institute of Material Physics, Tianjin Key Laboratory for Optoelectronic Materials and Devices, Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education; and Engineering Research Center of Communication Devices and Technology of Ministry of Education, Tianjin University of Technology, Tianjin 300384
White Emitting ZnS Nanocrystals: Synthesis and Spectrum Characterization
HUANG Qing-Song, DONG Dong-Qing, XU Jian-Ping, ZHANG Xiao-Song, ZHANG Hong-Min, LI Lan
Institute of Material Physics, Tianjin Key Laboratory for Optoelectronic Materials and Devices, Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education; and Engineering Research Center of Communication Devices and Technology of Ministry of Education, Tianjin University of Technology, Tianjin 300384
摘要Spherical organic-bonded ZnS nanocrystals with 4.0± 0.2 nm in diameter are synthesized by a liquid-solid-solution method. The photoluminescence spectrum of sample ([S2-]/[Zn2+] =1.0) shows a strong white emission with a peak at 490 nm and ~ 170 nm full widths at half maximum. By Gauss fitting, the white emission is attributed to the overlap of a blue emission and a green-yellow emission, originating from electronic transitions from internal S2- vacancies level to valence band and to the internal Zn2+ vacancy level, respectively. After sealingZnS nanocrystals onto InGaN chips, the device shows CIE coordinates of (0.29,0.30), which indicates their potential applications for white light emitting diodes.
Abstract：Spherical organic-bonded ZnS nanocrystals with 4.0± 0.2 nm in diameter are synthesized by a liquid-solid-solution method. The photoluminescence spectrum of sample ([S2-]/[Zn2+] =1.0) shows a strong white emission with a peak at 490 nm and ~ 170 nm full widths at half maximum. By Gauss fitting, the white emission is attributed to the overlap of a blue emission and a green-yellow emission, originating from electronic transitions from internal S2- vacancies level to valence band and to the internal Zn2+ vacancy level, respectively. After sealingZnS nanocrystals onto InGaN chips, the device shows CIE coordinates of (0.29,0.30), which indicates their potential applications for white light emitting diodes.
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2010, Vol. 27 
