Chemical Vapor Deposition Growth of Large-Area Monolayer MoS$_{2}$ and Fabrication of Relevant Back-Gated Transistor
Jian-Ying Chen1, Lu Liu1, Chun-Xia Li2**, Jing-Ping Xu1**
1School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 2Shenzhen Institution of Information Technology, Shenzhen 518172
Abstract：A closed two-temperature-zone chemical vapor deposition (CVD) furnace was used to grow monolayer molybdenum disulfide (MoS$_{2}$) by optimizing the temperature and thus the evaporation volume of the Mo precursor. The experimental results show that the Mo precursor temperature has a large effect on the size and shape transformation of the monolayer MoS$_{2}$, and at a lower temperature of $ < $760$^{\circ}\!$C, the size of the triangular MoS$_{2}$ increases with the elevating temperature, while at a higher temperature of $>$760$^{\circ}\!$C, the shape starts to change from a triangle to a truncated triangle. A large-area triangular monolayer MoS$_{2}$ with a side length of 145 μm is achieved at 760$^{\circ}\!$C. Further, the as-grown monolayer MoS$_{2}$ is used to fabricate back-gated transistors by means of electron beam lithography to evaluate the electrical properties of MoS$_{2}$ thin films. The MoS$_{2}$ transistors with monolayer MoS$_{2}$ grown at 760$^{\circ}\!$C exhibit a high on/off current ratio of 10$^{6}$, a mobility of 1.92 cm$^{2}$/Vs and a subthreshold swing of 194.6 mV/dec, demonstrating the feasible approach of CVD deposition of monolayer MoS$_{2}$ and the fabrication of transistors on it.
2019, Vol. 36 
