Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator
Ya-Yi Chen1,2, Yuan Liu2**, Zhao-Hui Wu1**, Li Wang1, Bin Li1, Yun-Fei En2, Yi-Qiang Chen2
1School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640 2Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Produce Reliability and Environmental Testing Research Institute, Guangzhou 510610
Abstract：Low-frequency noise (LFN) in all operation regions of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric, and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al$_2$O$_3$ gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge's parameter is about $1.18\times10^{-3}$. Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the $\Delta N$–$\Delta\mu$ model, and the total trap density near the IZO/oxide interface is about $1.23\times 10^{18}$ cm$^{-3}$eV$^{-1}$.
2018, Vol. 35 
