An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation
Teng Ma1,2,3, Qi-Wen Zheng1,2, Jiang-Wei Cui1,2, Hang Zhou1,2,3, Dan-Dan Su1,2,3, Xue-Feng Yu1,2**, Qi Guo1,2
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011 2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011 3University of Chinese Academy of Sciences, Beijing 100049
Abstract：The effects of proton irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of partially depleted SOI devices are experimentally investigated. It is demonstrated that heavy-ion irradiation will induce the decrease of TDDB lifetime for many device types, but we are amazed to find a measurable increase in the TDDB lifetime and a slight decrease in the radiation-induced leakage current after proton irradiation at the nominal operating irradiation bias. We interpret these results and mechanisms in terms of the effects of radiation-induced traps on the stressing current during the reliability testing, which may be significant to expand the understanding of the radiation effects of the devices used in the proton radiation environment.
. [J]. 中国物理快报, 2017, 34(7): 76104-.
Teng Ma, Qi-Wen Zheng, Jiang-Wei Cui, Hang Zhou, Dan-Dan Su, Xue-Feng Yu, Qi Guo. An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation. Chin. Phys. Lett., 2017, 34(7): 76104-.
2017, Vol. 34 
