Comparison of Cavities Formed in Single Crystalline and Polycrystalline $\alpha$-SiC after H Implantation
Qing Liao1, Long Kang2, Tong-Min Zhang2, Hui-Ping Liu2, Tao Wang3, Xiao-Gang Li2, Jin-Yu Li2, Zhen Yang4, and Bing-Sheng Li1*
1State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China 2Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China 3Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China 4Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-Sen University, Zhuhai 519082, China
Abstract：Cavities and extended defects formed in single crystalline and polycrystalline $\alpha$-SiC implanted with H$^{+}$ ions are compared. The samples are investigated by cross-sectional transmission electron microscopy. H$_{2}$ bubbles are formed during H implantation and H$_{2}$ molecules escape the sample to form cavities during thermal annealing at 1100℃. Microcracks and the extended defects prefer to nucleate in single crystalline $\alpha$-SiC, but not polycrystalline $\alpha$-SiC. Grain boundaries can account for the experimental results. The formation of cavities on grain boundaries is investigated.
. [J]. 中国物理快报, 2020, 37(7): 76102-.
Qing Liao, Long Kang, Tong-Min Zhang, Hui-Ping Liu, Tao Wang, Xiao-Gang Li, Jin-Yu Li, Zhen Yang, and Bing-Sheng Li. Comparison of Cavities Formed in Single Crystalline and Polycrystalline $\alpha$-SiC after H Implantation. Chin. Phys. Lett., 2020, 37(7): 76102-.
Li B S, Du Y Y, Wang Z G, Wei K F, Zhang H P, Yao C F, Chang H L, Jun J R, Cui M H, Sheng Y B, Pang L L, Zhu Y B, Gao X, Luo P, Zhu H P, Wang J and Wang D 2015 Vacuum113 75
2020, Vol. 37 
