Yu-Zhu Liu1, Bing-Sheng Li2**, Hua Lin1, Li Zhang3
1Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology, Nanjing University of Information Science & Technology, Nanjing 210044 2Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 3Department of Physics, School of Science, Lanzhou University of Technology, Lanzhou 730050
Abstract：The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He$^{+}$ ion implanted 6H-SiC (0001) wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900$^{\circ}\!$C. The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations. A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles. With increasing annealing to 1000$^{\circ}\!$C, 3C-SiC and columnar epitaxial growth 6H-SiC become unstable, instead of [0001] orientated 6H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing. The possible mechanisms for explanation are also discussed.
2017, Vol. 34 
