Atomic Mixing Induced by Ion Irradiation of V/Cu Multilayers
Yan-Bin Sheng1** , Hong-Peng Zhang1 , Tie-Long Shen1 , Kong-Fang Wei1 , Long Kang1 , Rui Liu2 , Tong-Min Zhang1 , Bing-Sheng Li3**
1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 7300002 Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 2300313 State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010
Abstract ：Bulk Cu/V multilayers simultaneously possess high strength and excellent radiation resistance thanks to their high density of interfaces. Irradiation-induced atomic mixing of Cu/V multilayers has been less investigated. Here, we investigate the ion irradiation of bulk Cu/V multilayers exposed to H$_{2}^{+}$ or He$^{+}$ ions at 350$^\circ\!$C. The microstructure and elemental distribution are investigated by transmission electron microscopy and energy dispersive x-ray spectroscopy. Facetted bubbles and atomic mixing are observed after ion irradiation. The possible mechanisms of irradiation-induced atomic mixing are discussed.
收稿日期: 2019-12-02
出版日期: 2020-02-22
引用本文:
. [J]. 中国物理快报, 2020, 37(3): 36101-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/37/3/036101
或
https://cpl.iphy.ac.cn/CN/Y2020/V37/I3/36101
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2020, Vol. 37 
