Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory
XU Cheng1,3, LIU Bo1, SONG Zhi-Tang1,2, FENG Song-Lin2, CHEN Bomy2
1Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3The Graduate School of the Chinese Academy of Sciences, Beijing 100080
4Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA
Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory
1Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3The Graduate School of the Chinese Academy of Sciences, Beijing 100080
4Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA
Abstract： Sn-doped Ge2Sb2Te5 thin films deposited on Si(100)/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9 °C, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2--10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.
(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
引用本文:
XU Cheng;LIU Bo;SONG Zhi-Tang;FENG Song-Lin;CHEN Bomy. Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory[J]. 中国物理快报, 2005, 22(11): 2929-2932.
XU Cheng, LIU Bo, SONG Zhi-Tang, FENG Song-Lin, CHEN Bomy. Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory. Chin. Phys. Lett., 2005, 22(11): 2929-2932.
2005, Vol. 22 
