Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE
Xiao-Meng Zhao, Yang Zhang**, Li-Jie Cui, Min Guan, Bao-Qiang Wang, Zhan-Ping Zhu, Yi-Ping Zeng
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
Abstract：We report the growth of InSb layers directly on GaAs (001) substrates without any buffer layers by molecular beam epitaxy (MBE). Influences of growth temperature and V/III flux ratios on the crystal quality, the surface morphology and the electrical properties of InSb thin films are investigated. The InSb samples with room-temperature mobility of 44600 cm$^{2}$/Vs are grown under optimized growth conditions. The effect of defects in InSb epitaxial on the electrical properties is researched, and we infer that the formation of In vacancy (V$_{\rm In})$ and Sb anti-site (Sb$_{\rm In})$ defects is the main reason for concentrations changing with growth temperature and Sb$_{2}$/In flux ratios. The mobility of the InSb sample as a function of temperature ranging from 90 K to 360 K is demonstrated and the dislocation scattering mechanism and phonon scattering mechanism are discussed.
. [J]. 中国物理快报, 2017, 34(7): 76105-.
Xiao-Meng Zhao, Yang Zhang, Li-Jie Cui, Min Guan, Bao-Qiang Wang, Zhan-Ping Zhu, Yi-Ping Zeng. Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE. Chin. Phys. Lett., 2017, 34(7): 76105-.
Zhang Y H, Chen P P and Lin T 2011 MBE Growth Electr. Properties InSb Film GaAs Substrate Seventh Int. Conf. Thin Film Phys. Appl. (Shanghai 24–27 September 2010)
2017, Vol. 34 
