Abstract：Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO$_{3}$ bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAlO$_{3}$ under O-rich conditions, while the Al$_{\rm La}$ antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO$_{3}$ films. For LaO-terminated LaAlO$_{3}$ films, La or Al vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO$_{2}$-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An Al interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlO$_{3}$-related materials.
Reyren N, Thiel S, Caviglia A D, Kourkoutis L F, Hammer G, Richter C, Schneider C W, Kopp T, Rüetschi A S, Jaccard D, Gabay M, Muller D A, Triscone J and Mannhart M J 2007 Science317 1196
2018, Vol. 35 
