Optical Properties of Atomic Defects in Hexagonal Boron Nitride Flakes under High Pressure
Xiao-Yu Zhao1,2 , Jun-Hui Huang1,2 , Zhi-Yao Zhuo1,2 , Yong-Zhou Xue1 , Kun Ding1 , Xiu-Ming Dou1,2** , Jian Liu1,2 , Bao-Quan Sun1,2
1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832 College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049
Abstract ：We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride (hBN) at low temperatures using a diamond anvil cell (DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through pressure. Based on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions.
收稿日期: 2019-11-27
出版日期: 2020-03-24
:
42.50.Dv
(Quantum state engineering and measurements)
61.72.-y
(Defects and impurities in crystals; microstructure)
62.50.-p
(High-pressure effects in solids and liquids)
78.67.-n
(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
引用本文:
. [J]. 中国物理快报, 2020, 37(4): 44204-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/37/4/044204
或
https://cpl.iphy.ac.cn/CN/Y2020/V37/I4/44204
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2020, Vol. 37 
