Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs
Qi-Wen Zheng1,2 , Jiang-Wei Cui1,2** , Ying Wei1,2 , Xue-Feng Yu1,2 , Wu Lu1,2 , Diyuan Ren1,2 , Qi Guo1,2
1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 8300112 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011
Abstract ：The bias dependence of radiation-induced narrow-width channel effects (RINCEs) in 65-nm n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) is investigated. The threshold voltage of the narrow-width 65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.
收稿日期: 2017-11-29
出版日期: 2018-03-13
:
61.80.Ed
(γ-ray effects)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
85.30.Tv
(Field effect devices)
引用本文:
. [J]. 中国物理快报, 2018, 35(4): 46102-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/4/046102
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I4/46102
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2018, Vol. 35 
