Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K
Yuan Liu1,2,3 , Li Wang2,3 , Shu-Ting Cai1** , Ya-Yi Chen2,3 , Rongsheng Chen2,3 , Xiao-Ming Xiong1 , Kui-Wei Geng2
1 School of Automation, Guangdong University of Technology, Guangzhou 5100062 School of Electronic and Information Engineering, South China University of Technology, Guangzhou 5106403 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029
Abstract ：The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10–400 K. The variation of electrical parameters (threshold voltage, field effect mobility, sub-threshold swing, and leakage current) with decreasing temperature are then extracted and analyzed. Moreover, the dominated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.
收稿日期: 2018-06-14
出版日期: 2018-08-29
:
85.30.Tv
(Field effect devices)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
73.50.Dn
(Low-field transport and mobility; piezoresistance)
77.55.hf
(ZnO)
引用本文:
. [J]. 中国物理快报, 2018, 35(9): 98502-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/9/098502
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I9/98502
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2018, Vol. 35 
