Band Alignment at the Al$_{2}$O$_{3}/\beta$-Ga$_{2}$O$_{3}$ Interface with CHF$_{3}$ Treatment
Hao Liu , Wen-Jun Liu* , Yi-Fan Xiao , Chao-Chao Liu , Xiao-Han Wu , and Shi-Jin Ding
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Abstract ：The energy band alignment at the atomic layer deposited Al$_{2}$O$_{3}/\beta$-Ga$_{2}$O$_{3}$ interface with CHF$_{3}$ treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry (SIMS). With additional CHF$_{3}$ plasma treatment, the conduction band offset increases from 1.95${\pm}$0.1 eV to 2.32${\pm}$0.1 eV; and the valence band offset decreases from 0.21${\pm}$0.1 eV to $-$0.16${\pm}$0.1 eV. As a result, the energy band alignment changes from type I to type II. This energy band alignment transition could be attributed to the downshift of the core-level of Ga $3d$, resulting from the Ga–F bond formation in the F-rich interfacial layer, which is confirmed by the SIMS results.
收稿日期: 2020-04-15
出版日期: 2020-06-21
:
73.20.At
(Surface states, band structure, electron density of states)
73.22.-f
(Electronic structure of nanoscale materials and related systems)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
71.15.-m
(Methods of electronic structure calculations)
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2020, Vol. 37 
