Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination
Lan-Feng Tang1,2, Hai Lu1,2**, Fang-Fang Ren1,2, Dong Zhou1,2, Rong Zhang1,2, You-Dou Zheng1,2, Xiao-Ming Huang3,
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 2Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 3Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003
Abstract：The electrical instability behaviors of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under ultraviolet (UV) illumination are studied. As UV radiation dosage increases, the turn-on voltage of the TFT shows continuous negative shift, which is accompanied by enhanced degradation of sub-threshold swing and field-effect mobility. The electrical instability is caused by the increased carrier concentration and defect states within the device channel, which can be further attributed to additional oxygen vacancy generation and ionization of oxygen vacancy related defects upon UV illumination, respectively. Furthermore, the performance of the a-IGZO TFT treated with UV radiation can gradually recover to its initial state after long-time storage.
2016, Vol. 33 
