Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device
ZHONG Min1,2, SONG Zhi-Tang1, LIU Bo1, FENG Song-Lin1, CHEN Bomy3
1Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of the Chinese Academy of Sciences, Beijing 1000493Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA
Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device
1Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of the Chinese Academy of Sciences, Beijing 1000493Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA
摘要In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge2Sb2Te5 phase change films. We use reactive ion etching (RIE) as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, current--voltage characteristics test demonstrates that the set threshold voltage is reduced from 13V to 2.7V and the threshold current from 0.1mA to 0.025mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method.
Abstract：In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge2Sb2Te5 phase change films. We use reactive ion etching (RIE) as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, current--voltage characteristics test demonstrates that the set threshold voltage is reduced from 13V to 2.7V and the threshold current from 0.1mA to 0.025mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method.
ZHONG Min;SONG Zhi-Tang;LIU Bo;FENG Song-Lin;CHEN Bomy. Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device[J]. 中国物理快报, 2008, 25(2): 762-764.
ZHONG Min, SONG Zhi-Tang, LIU Bo, FENG Song-Lin, CHEN Bomy. Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device. Chin. Phys. Lett., 2008, 25(2): 762-764.
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