Performance Improvement of Organic Thin Film Transistors Based on Gate Insulator Polymethyl-Methacrylate-co-Glyciclyl-Methacrylate
LIU Xue-Qiang1, ZHANG Tong1, WANG Li-Jie1, LI Ming-You1, FENG Chen-Gang1,2, MA Dong-Ge2
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300122State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022
Performance Improvement of Organic Thin Film Transistors Based on Gate Insulator Polymethyl-Methacrylate-co-Glyciclyl-Methacrylate
LIU Xue-Qiang1;ZHANG Tong1;WANG Li-Jie1;LI Ming-You1;FENG Chen-Gang1,2;MA Dong-Ge2
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 1300122State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022
摘要Organic thin transistors (OTFTs) on indium tin oxide glass substrates are prepared with polymethyl-methacrylate-co-glyciclyl-methacrylate (PMMA-GMA) as the gate insulator layer and copper phthalocyanine as the organic semiconductor layer. By controlling the thickness, the average roughness of surface is reduced and the OTFT performance is improved with leak current decreasing to 10-11A and on/off ratio of 104. Under the condition of drain-source voltage -20V, a threshold voltage of -3.5V is obtained. The experimental results show that PMMA-GMA is a promising insulator material with a dielectric constant in a range of 3.9--5.0.
Abstract：Organic thin transistors (OTFTs) on indium tin oxide glass substrates are prepared with polymethyl-methacrylate-co-glyciclyl-methacrylate (PMMA-GMA) as the gate insulator layer and copper phthalocyanine as the organic semiconductor layer. By controlling the thickness, the average roughness of surface is reduced and the OTFT performance is improved with leak current decreasing to 10-11A and on/off ratio of 104. Under the condition of drain-source voltage -20V, a threshold voltage of -3.5V is obtained. The experimental results show that PMMA-GMA is a promising insulator material with a dielectric constant in a range of 3.9--5.0.
LIU Xue-Qiang;ZHANG Tong;WANG Li-Jie;LI Ming-You;FENG Chen-Gang;MA Dong-Ge. Performance Improvement of Organic Thin Film Transistors Based on Gate Insulator Polymethyl-Methacrylate-co-Glyciclyl-Methacrylate[J]. 中国物理快报, 2008, 25(2): 758-761.
LIU Xue-Qiang, ZHANG Tong, WANG Li-Jie, LI Ming-You, FENG Chen-Gang, MA Dong-Ge. Performance Improvement of Organic Thin Film Transistors Based on Gate Insulator Polymethyl-Methacrylate-co-Glyciclyl-Methacrylate. Chin. Phys. Lett., 2008, 25(2): 758-761.
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2008, Vol. 25 
