Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors
YU Guang1,2 , WU Chen-Fei1,2 , LU Hai1,2** , REN Fang-Fang1,2 , ZHANG Rong1,2 , ZHENG You-Dou1,2 , HUANG Xiao-Ming3
1 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 2100932 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 2100933 Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003
Abstract ：Ring oscillators based on indium gallium zinc oxide thin film transistors are fabricated on glass substrates. The oscillator circuit consists of seven delay stages and an output buffer inverter. The element inverter exhibits a voltage gain higher than ?6 V/V and a wide output swing close to 85% of the full swing range. The dynamic performance of the ring oscillators is evaluated as a function of supply voltage and at different gate lengths. A maximum oscillation frequency of 0.88 MHz is obtained for a supply voltage of 50 V, corresponding to a propagation delay of less than 85 ns/stage.
收稿日期: 2014-11-11
出版日期: 2015-04-30
:
73.61.Jc
(Amorphous semiconductors; glasses)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
85.40.-e
(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
引用本文:
. [J]. 中国物理快报, 2015, 32(4): 47302-047302.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/32/4/047302
或
https://cpl.iphy.ac.cn/CN/Y2015/V32/I4/47302
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2015, Vol. 32 
