中国物理快报  2015, Vol. 32 Issue (03): 38502-038502    DOI: 10.1088/0256-307X/32/3/038502
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Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphosilicate Glass Electrolyte
ZHOU Ju-Mei1,2**, GAO Xiao-Hong1, ZHANG Hong-Liang2
1School of Mechanical and Electronic Engineering, Ningbo Dahongying University, Ningbo 315175
2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201