Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions
GAO Xi-Li1,2, ZHANG Xiao-Zhong1,2**, WAN Cai-Hua1,2, WANG Ji-Min1,2
1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 2National Center for Electron Microscopy (Beijing), Tsinghua University, Beijing 100084
Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions
GAO Xi-Li1,2, ZHANG Xiao-Zhong1,2**, WAN Cai-Hua1,2, WANG Ji-Min1,2
1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 2National Center for Electron Microscopy (Beijing), Tsinghua University, Beijing 100084
摘要Nitrogen doped a-C/Silicon (a-C:N/Si) heterojunctions have been fabricated by using the pulsed laser deposition (PLD) technique and their current-voltage characteristics at various temperatures are investigated. For reverse applied voltages, a-C:N/Si heterojunctions exhibit metal-insulator transition characteristics and the transition temperature can be controlled by the applied voltages. After the excitation of repeated high reverse applied voltages, the current-voltage curves show obvious hysteresis behaviors at low temperatures. These hysteresis behaviors are reproducible and the ratio of the high/low resistance can be greater than 104.
Abstract：Nitrogen doped a-C/Silicon (a-C:N/Si) heterojunctions have been fabricated by using the pulsed laser deposition (PLD) technique and their current-voltage characteristics at various temperatures are investigated. For reverse applied voltages, a-C:N/Si heterojunctions exhibit metal-insulator transition characteristics and the transition temperature can be controlled by the applied voltages. After the excitation of repeated high reverse applied voltages, the current-voltage curves show obvious hysteresis behaviors at low temperatures. These hysteresis behaviors are reproducible and the ratio of the high/low resistance can be greater than 104.
GAO Xi-Li1,2, ZHANG Xiao-Zhong1,2**, WAN Cai-Hua1,2, WANG Ji-Min1,2. Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions[J]. 中国物理快报, 2012, 29(2): 27102-027102.
GAO Xi-Li, ZHANG Xiao-Zhong, WAN Cai-Hua, WANG Ji-Min. Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions. Chin. Phys. Lett., 2012, 29(2): 27102-027102.
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