Effect of Substrates on CuInSe2 Nanoparticle Thin Films by Radio Frequency Reactive Sputtering
HUANG Shi-Yong1,2 , ZHANG Li-De1 , LI Guang-Hai1 , DAI Zhen-Hong1,2 , ZHU Xiao-Guang1 , QU Feng-Qi2 , FU Sheng-Qi2 , ZHONG Yu-Rong2 , MIAO Y2
1 Institute of Solid State Physics, Chinese Academy of
Sciences, Hefei 230031
2 Department of Physics, Yantai University, Yantai 264005
Effect of Substrates on CuInSe2 Nanoparticle Thin Films by Radio Frequency Reactive Sputtering
HUANG Shi-Yong1,2 ;ZHANG Li-De1 ;LI Guang-Hai1 ;DAI Zhen-Hong1,2 ;ZHU Xiao-Guang1 ;QU Feng-Qi2 ;FU Sheng-Qi2 ;ZHONG Yu-Rong2 ;MIAO Y2
1 Institute of Solid State Physics, Chinese Academy of
Sciences, Hefei 230031
2 Department of Physics, Yantai University, Yantai 264005
关键词 ：
78.67.Bf ,
78.66.Li ,
71.23.Cq
Abstract ： CuInSe2 (CIS) nanoparticle thin films have been prepared by rf reactive magnetron sputtering from compound ternary fan-shaped targets on low temperature substrates with pure argon gas as the atmosphere. The stoichiometry of the ternary compound semiconductor quantum dots can be easily controlled by the ratios of the ternary elements and sputtering parameters. CIS nanoparticle thin films regularly shaped and distributed reasonably uniform in size on substrates of 7059 glass etc can be grown in this way. The average particle diameter can be varied between 40 and 80 nm by appropriate choice of the substrate temperature, power density and total CIS coverage. The optical and electrical properties of the CIS films have also been studied.
Key words ：
78.67.Bf
78.66.Li
71.23.Cq
出版日期: 2002-08-01
:
78.67.Bf
(Nanocrystals, nanoparticles, and nanoclusters)
78.66.Li
(Other semiconductors)
71.23.Cq
(Amorphous semiconductors, metallic glasses, glasses)
引用本文:
HUANG Shi-Yong;ZHANG Li-De;LI Guang-Hai;DAI Zhen-Hong;ZHU Xiao-Guang;QU Feng-Qi;FU Sheng-Qi;ZHONG Yu-Rong;MIAO Y. Effect of Substrates on CuInSe2 Nanoparticle Thin Films by Radio Frequency Reactive Sputtering[J]. 中国物理快报, 2002, 19(8): 1199-1202.
2 Nanoparticle Thin Films by Radio Frequency Reactive Sputtering. Chin. Phys. Lett., 2002, 19(8): 1199-1202.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I8/1199
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2002, Vol. 19 
