Nonlinear Optical Response of nc-Si-SiO2 Films Studied with Femtosecond Four-Wave Mixing Technique
GUO Heng-Qun1 , WANG Qi-Ming2
1 College of Information Science and Technology, Huaqiao University, Quanzhou 362021
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Nonlinear Optical Response of nc-Si-SiO2 Films Studied with Femtosecond Four-Wave Mixing Technique
GUO Heng-Qun1 ;WANG Qi-Ming2
1 College of Information Science and Technology, Huaqiao University, Quanzhou 362021
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
42.65.-k ,
78.67.Bf ,
78.47.+p
Abstract ： Nonlinear optical properties of silicon nanocrystals (nc-Si) embedded in SiO2 films are investigated using time-resolved four-wave mixing technique with a femtosecond laser. The off-resonant third-order nonlinear susceptibility X(3) is observed to be 1.3×10-10 esu at 800nm. The relaxation time of the film is fast as short as 50fs. The off-resonant nonlinearity is predominantly electronic in origin and enhanced due to quantum confinement.
Key words ：
42.65.-k
78.67.Bf
78.47.+p
出版日期: 2006-11-01
引用本文:
GUO Heng-Qun;WANG Qi-Ming. Nonlinear Optical Response of nc-Si-SiO2 Films Studied with Femtosecond Four-Wave Mixing Technique[J]. 中国物理快报, 2006, 23(11): 2989-2992.
2 Films Studied with Femtosecond Four-Wave Mixing Technique. Chin. Phys. Lett., 2006, 23(11): 2989-2992.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I11/2989
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